Method of altering the properties of a thin film and substrate implementing said method
AssigneeUniversite Claude Bernard Lyon 1
InventorsOlivier Marty, Volodymyr Lysenko
Life of this patent
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Abstract
The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.
Claims16
A process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, comprising the steps of:
- forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and
- treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.
A substrate for microelectronics, nanoelectronics or for microtechnology, nanotechnology, characterised in that it is formed by a nanostructured support with specific upper surface (2) and deformed following treatment and on the surface of which is formed at least one thin layer (1) deformed in correspondence with the support.
Dependencies are inferred from the claim text.