Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
OwnerHee-Gyoun Lee, Venkat Selvamanickaminventors
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Abstract
A chemical vapor deposition (CVD) apparatus including a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, and at least one precursor composition monitor. The precursor supply system includes at least one precursor source, at least one a delivery mechanism including at least one assist vehicle, at least one vaporizer for vaporizing a precursor provided by at least the at least one precursor source, and at least one vehicle for transporting at least the vaporized precursor from the precursor supply to the precursor injector of the CVD apparatus.
Claims81
A chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductor on an elongate substrate, the CVD apparatus comprising:
- a) a reactor;
- b) at least one substrate heater;
- c) at least one precursor supply system;
- d) at least one precursor injector;
- and
- e) at least one gas composition monitor.
A precursor supply system usable with a reactor of a chemical vapor deposition (CVD) apparatus in combination with a substrate heater, precursor injector and usable in the manufacture of superconducting conductor on an elongate substrate, the precursor supply system comprising:
- a) at least one precursor source;
- b) at least one a delivery mechanism including at least one assist vehicle;
- c) at least one vaporizer for vaporizing a precursor provided by at least the at least one precursor source;
- and
- d) at least one vehicle for transporting at least the vaporized precursor from the precursor supply to the precursor injector of the CVD apparatus.
A chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductor on an elongate substrate, the CVD apparatus comprising:
- a) a reactor;
- b) at least one substrate heater;
- and
- c) at least one precursor supply system;
- i) at least one precursor source,
- ii) at least one a delivery mechanism including at least one assist vehicle;
- ii) at least one vaporizer for vaporizing a precursor provided by at least the at least one precursor source;
- and
- vi) at least one vehicle for transporting at least the vaporized precursor from the precursor supply to the precursor injector of the CVD apparatus;
- d) at least one precursor injector;
- and
- e) at least one gas composition monitor.
A method for manufacturing a high temperature superconducting conductor, said method comprising the steps of:
- a) providing at least a portion of an elongate substrate to a reactor;
- b) heating the at least a portion of the elongate substrate to a temperature so as to permit the formation of one of a predecessor to a superconducting material and a superconducting material on the at least a portion of the substrate;
- c) providing at least one precursor to the reactor so as to permit the formation one of a predecessor to a superconducting material and a superconducting material on the at least a portion of the substrate;
- and
- d) monitoring at least one aspect of a composition of a gas in the reactor so as to control the formation of the one of a predecessor to a superconducting material and a superconducting material on the at least a portion of the substrate.
A method for manufacturing a high temperature superconducting conductor using a reactor of a chemical vapor deposition (CVD) apparatus in combination with a substrate heater, and precursor injector, the method comprising the steps of:
- a) providing at least one precursor to a vaporizer using at least one assist vehicle;
- b) vaporizing the precursor;
- and
- c) transporting the at least one vaporized precursor to the reactor so as to permit a formation of formation of the one of a predecessor to a superconducting material and a superconducting material.
A method for manufacturing a high temperature superconducting conductor, the method comprising the steps of:
- a) providing at least a portion of at least one substrate heater to a reactor;
- b) heating the at least a portion of at least one substrate heater to a temperature sufficient to permit to permit a formation of formation of the one of a predecessor to a superconducting material and a superconducting material;
- and
- c) providing at least one precursor to a vaporizer using at least one assist vehicle;
- d) vaporizing the precursor;
- e) transporting the at least one vaporized precursor to the reactor so as to permit a formation of formation of the one of a predecessor to a superconducting material and a superconducting material on the at least a portion of the substrate;
- and
- f) monitoring at least one aspect of a composition of a gas in the reactor so as to control the formation of the one of a predecessor to a superconducting material and a superconducting material on the at least a portion of the substrate.
A high temperature superconducting conductor comprising:
- a) an elongate substrate;
- b) at least one oxide superconductor layer supported by said elongate substrate, and
- c) an Ic of over about 200 A/cm-width.
Dependencies are inferred from the claim text.