Semiconductor laser apparatus
AssigneeHamamatsu Photonics K.K.
InventorsXin Gao, Yujin Zheng
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AssigneeHamamatsu Photonics K.K.
InventorsXin Gao, Yujin Zheng
Estimating the term…
The present invention relates to a semiconductor laser apparatus capable of reducing a spread angle of an emission light with downsizing. The semiconductor laser apparatus has an active region between a first end surface and a second end surface. A first reflection structure and a partial reflection structure are provided on the first end surface side, and the end surface of the active region is divided into a total reflection region and a partial reflection region in combination with these first reflection structure and partial reflection structure. A laser resonator is constituted by the first reflection structure and partial reflection structure. On the second end surface side, a second reflection structure is provided to be positioned on the way of a resonance optical path of the laser resonator. While the light emitted within the active region propagates on a resonance optical path, an induction emission is produced, and thereby the semiconductor laser carries out a laser oscillation. As a result, among the light arrived at the partial reflection structure, the part having transmitted through the partial reflection structure is outputted outside the semiconductor laser apparatus.
A semiconductor laser apparatus comprising:
Dependencies are inferred from the claim text.