Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials
AssigneesSoitec, Cea
InventorsOlivier Rayssac, Beryl Blondeau, Hubert Moriceau, Christelle Lagahe-Blanchard, Franck Fournel
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Abstract
This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.
Claims29
In a process for treatment of a multi-layer wafer made of materials having differential thermal characteristics wherein the process comprises a high temperature heat treatment that can generate secondary defects in working surfaces of the wafer, the improvement which comprises preparing the working surface(s) of the wafer prior to the high temperature treatment to reduce or eliminate such secondary defects.
Dependencies are inferred from the claim text.