Ion exchange waveguides and methods fabrication
AssigneeCalifornia Institute of Technology, a California Non-Profit Corporation
InventorLee Burrows
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AssigneeCalifornia Institute of Technology, a California Non-Profit Corporation
InventorLee Burrows
Estimating the term…
A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period. In yet another aspect of the invention an anneal container is provided that allows for crystalline substrates to be annealed in the presence of powder without contaminating the substrate with the powder during the anneal process. Waveguides manufactured in accordance with the method exhibit superior drift performance.
A method for fabrication of an ion exchange waveguide, the method comprising:
14-22. (canceled)
A method for fabrication of an ion exchange waveguide, the method comprising:
The method of claim 22 wherein said annealing further comprises pressurizing to within a pressure range of about 1 psi above ambient atmospheric pressure to about 25 psi above ambient atmospheric pressure.
36-44. (canceled)
A method for fabrication of an ion exchange waveguide, the method comprising:
A method in accordance with claim 42 wherein the maximum anneal temperature is in a range of about 100° C. to about 1000°.
(canceled)
An annealing container comprising:
An ion exchange waveguide, comprising:
69-70. (canceled)
Dependencies are inferred from the claim text.