Plasma processing apparatus and method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsNaoki Hirose, Takashi Inujima, Toru Takayama
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Abstract
A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.
Claims42
A method of forming a film having an amorphous structure, the method comprising the steps of:
- introducing microwaves into a reaction chamber having an inner wall;
- forming a magnetic field in the reaction chamber;
- introducing a reactive gas containing a carbon compound into the reaction chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field;
- placing a substrate in the reaction chamber;
- and
- depositing the film having the amorphous structure on the substrate,
- wherein the substrate is located distant from a resonance space.
A method of forming a film having an amorphous structure, the method comprising the steps of:
- introducing microwaves into a reaction chamber having an inner wall;
- forming a magnetic field in the reaction chamber;
- introducing a reactive gas containing a carbon compound into the reaction chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field;
- placing a substrate in the reaction chamber;
- and
- depositing the film having the amorphous structure on the substrate,
- wherein a bias voltage is applied to the plasma.
A method of forming a film having an amorphous structure, the method comprising the steps of:
- introducing microwaves into a reaction chamber having an inner wall;
- forming a magnetic field in the reaction chamber;
- placing a substrate in the reaction chamber;
- introducing a hydrogen gas into the reaction chamber wherein the hydrogen gas is excited by a cyclotron resonance using the microwaves and the magnetic field whereby a surface of the substrate is cleaned;
- introducing a reactive gas containing a carbon compound into the reaction chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field;
- depositing the film having the amorphous structure on the substrate,
- wherein the substrate is located distant from a resonance space.
A method of forming a film having an amorphous structure, the method comprising the steps of:
- introducing microwaves into a reaction chamber having an inner wall;
- forming a magnetic field in the reaction chamber;
- introducing a reactive gas containing a carbon compound into the reaction chamber wherein the reactive gas is converted into a plasma by a resonance selected from the group consisting of an electron cyclotron resonance, an whistler mode resonance and a mixture thereof using the microwaves and the magnetic field;
- placing a substrate in the reaction chamber;
- and
- depositing the film having the amorphous structure on the substrate,
- wherein the substrate is located distant from a resonance space.
A method of forming a film having an amorphous structure, the method comprising the steps of:
- introducing microwaves into a reaction chamber having an inner wall;
- forming a magnetic field in the reaction chamber;
- introducing a reactive gas containing a carbon compound into the reaction chamber wherein the reactive gas is converted into a plasma by a resonance selected from the group consisting of an electron cyclotron resonance, an whistler mode resonance and a mixture thereof using the microwaves and the magnetic field;
- placing a substrate in the reaction chamber;
- and
- depositing the film having the amorphous structure on the substrate,
- wherein a bias voltage is applied to the plasma.
A method of forming a film having an amorphous structure, the method comprising the steps of:
- introducing microwaves into a reaction chamber having an inner wall;
- forming a magnetic field in the reaction chamber;
- placing a substrate in the reaction chamber;
- introducing a hydrogen gas into the reaction chamber wherein the hydrogen gas is excited by a cyclotron resonance using the microwaves and the magnetic field whereby a surface of the substrate is cleaned;
- introducing a reactive gas containing a carbon compound into the reaction chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field;
- depositing the film having the amorphous structure on the substrate,
- wherein the substrate is located distant from a resonance space.
Dependencies are inferred from the claim text.