Plasma control using dual cathode frequency mixing

Apparatus for controlling characteristics of a plasma in a semiconductor substrate processing system, comprising:

• a first electrode disposed within a processing chamber;
• a first RF source for providing a first RF signal coupled to the first electrode through a match network;
• and
• a second RF source for providing a second RF signal coupled to the first electrode through the match network, wherein the match network has a single feed to the first electrode and wherein the first and second RF sources are adapted to provide a manipulable interaction for controlling at least one plasma characteristic.