Semiconductor devices having dual spacers and methods of fabricating the same

Abstract

Semiconductor devices and methods of making the same are disclosed. According to one example, a semiconductor device having dual spacer may include a semiconductor substrate, a gate oxide film and a gate poly provided in a device region of the semiconductor substrate, a halo/pocket implant region formed in a region of the semiconductor substrate by which the gate poly is defined, and an inner spacer formed at a side wall of the gate poly for defining the width of a lower portion of the gate poly. The semiconductor device may also include an outer spacer formed at the side wall of the gate poly for defining the width of an upper portion of the gate poly, source/drain regions provided on the semiconductor substrate under the gate oxide film, and a salicide film provided on surfaces of the gate poly and the source/drain region.

Dependencies are inferred from the claim text.