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US 2005/0087798 A1Published application
Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorSung-taeg Kang
Life of this patent
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Abstract
A non-volatile memory device and a fabrication method thereof, wherein a charge trapping layer, which is a memory unit, is formed at opposite ends of a gate of a cell, i.e., adjacent to source and drain junction regions, such that portions of the charge trapping layer adjacent to the source and drain junction regions are formed to be thicker than other portions of the charge trapping layer. Therefore, regions adjacent to junction regions function as electron storage regions and hole filing regions.
Claims10
A non-volatile memory device comprising:
- a lower oxide layer, a charge trapping layer, an upper oxide layer, and a control gate sequentially stacked on a substrate;
- and
- a source region and a drain junction region formed at opposite sides of the stacked lower oxide layer, charge trapping layer, upper oxide layer and control gate, wherein portions of the charge trapping layer adjacent to the source junction region and the drain junction region are thicker than remaining portions of the charge trapping layer.
A non-volatile memory device comprising:
- an ion implantation layer for controlling a threshold voltage formed in a substrate;
- a lower oxide layer formed on the ion implantation layer;
- a charge trapping layer formed on the lower oxide layer and having two portions thereof shaped like two spacers facing each other, the two spaces each having an inner portion shorter than an outer portion;
- an upper oxide layer formed on the charge trapping layer and the lower oxide layer;
- a control gate that is self-aligned on the upper oxide layer and includes a flat upper surface;
- and
- a source junction region and a drain junction region formed in the subsytrate at opposite sides of the ion implantation layer.
4 more elements
10-22. (canceled)
Dependencies are inferred from the claim text.