Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device

A semiconductor device having a capacitor, the semiconductor device comprising:

• a semiconductor substrate having a gate structure and an active region;
• an interlayer dielectric film formed on the active region;
• a lower electrode formed of a metal containing aluminum on the interlayer dielectric film;
• a dielectric layer formed on the lower electrode;
• an upper electrode formed on the dielectric layer;
• and
• a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode.

A semiconductor device having a capacitor, the semiconductor device comprising:

• a semiconductor substrate having a gate structure and an active region;
• an interlayer dielectric film formed on the active region;
• a lower electrode formed on the interlayer dielectric film;
• a dielectric layer formed on the lower electrode;
• an upper electrode formed on the dielectric layer;
• a plug formed in the interlayer dielectric film to connect the active region and the lower electrode;
• and
• a diffusion prevention film formed of a metal containing aluminum on the plug.

A method of manufacturing a semiconductor device having a capacitor, the method comprising:

• forming a gate structure and an active region on a semiconductor substrate;
• forming an interlayer dielectric film on the resultant semiconductor substrate;
• forming a plug in the interlayer dielectric film to electrically connect with the active region;
• forming a mold oxidation layer on the plug and the interlayer dielectric film;
• patterning the mold oxidation layer with a predetermined pattern, and then forming a lower electrode of material containing aluminum on the plug;
• and
• sequentially forming a dielectric layer and an upper electrode on the lower electrode.

A method of manufacturing a semiconductor device having a capacitor, the method comprising:

• forming a gate structure and a source and drain region on a semiconductor substrate;
• forming an interlayer dielectric film on the resultant semiconductor substrate;
• forming a plug in the interlayer dielectric film to electrically connect with the source and drain region;
• forming a diffusion prevention film of material containing aluminum on the plug;
• forming a mold oxidation layer on the diffusion prevention film and the interlayer dielectric film;
• patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode on the plug;
• and
• sequentially forming a dielectric layer and an upper electrode on the lower electrode.