Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorYoshiaki Asao
Life of this patent
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Abstract
A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a write word line is disposed right under the MTJ element. The lower and side surfaces of the write word line are also coated with the yoke materials which have the high permeability. The yoke materials on the lower and side surfaces of the write word line are also separated from each other by the barrier layer.
Claims21
1-56. (canceled)
A magnetic random access memory comprising:
- a memory cell which uses a magneto resistive effect;
- a write line which flows a current for writing data to the memory cell unit, said write line having a first surface and a second surface adjacent to the first surface;
- a first yoke material which coats the first surface of the write line;
- and
- a second yoke material which coats a second surface of the write line;
- and
- a barrier layer which separates the first yoke material from the second yoke material.
Dependencies are inferred from the claim text.