Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a first circuit outputting a constant current or voltage regardless of a change in input current or voltage, the first circuit being composed of a semiconductor element comprising:
• a first gate electrode formed above a semiconductor substrate,
• a first channel region formed below the first gate electrode in the semiconductor substrate, the first channel region not having a short-channel effect suppression structure,
• a first source region formed in one side of the first channel region, and
• a first drain region formed in another side of the first channel region;
• and
• a second circuit different from the first circuit, the second circuit being composed of a semiconductor element comprising:
• a second gate electrode formed above the semiconductor substrate,
• a second channel region formed below the second gate electrode in the semiconductor substrate, the second channel region having a short-channel effect suppression structure,
• a second source region formed in one side of the second channel region, and
• a second drain region formed in another side of the second channel region.

A method of manufacturing a semiconductor device including a first semiconductor element for outputting a constant current or voltage and a second semiconductor element different from the first semiconductor element, the method comprising:

• forming a first gate electrode of the first semiconductor element in a first region above a semiconductor substrate;
• forming a second gate electrode of the second semiconductor element in a second region above the semiconductor substrate;
• forming a mask in the first region;
• forming a high concentration impurity region in a part of the semiconductor substrate below the second gate electrode;
• and
• forming a source region and a drain region corresponding to each of the first gate electrode and the second gate electrode.