Back to results
US 2005/0087769 A1Published application
Display device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Osamu Nakamura, Aki Yamamiti, Naoto Yamade
Life of this patent
Estimating the term…
Abstract
A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.
Claims77
A display device comprising:
- a display area comprising:
- a first electrode over a substrate;
- an insulating layer covering an edge of the first electrode;
- a layer including an organic compound over the first electrode;
- and
- a second electrode the layer including the organic compound,
- wherein an impurity element of one conductivity is added to the first electrode and the insulating layer.
4 more elements
A display device comprising:
- a thin film transistor over a substrate;
- an interlayer insulating film over the thin film transistor;
- a first electrode over the interlayer insulating film, the first electrode connected to the thin film transistor through the interlayer insulating film;
- an insulating layer covering an edge of the first electrode;
- a layer including an organic compound over the first electrode;
- and
- a second electrode over the layer including the organic compound,
- wherein an impurity element of one conductivity is added to the first electrode, the insulating layer, and a side surface of the interlayer insulating film.
5 more elements
A display device comprising:
- a thin film transistor over a substrate;
- an interlayer insulating film having at least one opening portion, over the thin film transistor;
- a first electrode over the interlayer insulating film, the first electrode connected to the thin film transistor through the interlayer insulating film;
- an insulating layer covering an edge of the first electrode;
- a layer including an organic compound over the first electrode;
- and
- a second electrode over the layer including the organic compound,
- wherein an impurity element of one conductivity is added to the first electrode, the insulating layer, a side surface of the interlayer insulating film, and a side surface of the opening portion.
5 more elements
A display device comprising:
- a thin film transistor over a substrate;
- an interlayer insulating film having at least one opening portion, over the thin film transistor;
- a first electrode over the interlayer insulating film, the first electrode connected to the thin film transistor through the interlayer insulating film;
- an insulating layer covering an edge of the first electrode;
- a layer including an organic compound over the first electrode;
- and
- a second electrode over the layer including the organic compound,
- wherein an impurity element of one conductivity is added to the first electrode, a side surface of the interlayer insulating film, and a side surface of the opening portion
5 more elements
A manufacturing method of a display device comprising:
- forming a thin film transistor over a substrate;
- forming an interlayer insulating film over the thin film transistor;
- forming a first electrode electrically connected to the thin film transistor over the interlayer insulating film;
- forming an insulating layer covering an edge of the first electrode;
- doping an impurity element of one conductivity to the first electrode and the insulating layer;
- forming a layer including an organic compound over the first electrode;
- and
- forming a second electrode over the layer including an organic compound.
5 more elements
A manufacturing method of a display device comprising:
- forming a thin film transistor over a first substrate;
- forming an interlayer insulating film over the thin film transistor;
- removing the interlayer insulating film selectively so that a side surface of the interlayer insulating film has a tapered shape at an edge of the first substrate;
- forming a first electrode electrically connected to the thin film transistor over the interlayer insulating film;
- forming an insulating layer covering an edge of the first electrode;
- doping an impurity element of one conductivity to the first electrode, the insulating layer, and at least the side surface of the interlayer insulating film;
- forming a layer including an organic compound over the first electrode;
- forming a second electrode over the layer including an organic compound;
- and
6 more elements
A manufacturing method of a display device comprising:
- forming a thin film transistor over a first substrate;
- forming an interlayer insulating film over the thin film transistor;
- removing the interlayer insulating film selectively so that at least one opening is formed in the interlayer insulating film and a side surface of the interlayer insulating film has a tapered shape at an edge of the first substrate;
- first doping an impurity element of one conductivity to the opening portion and the side surface of the interlayer insulating film;
- forming a first electrode electrically connected to the thin film transistor over the interlayer insulating film;
- forming an insulating layer covering an edge of the first electrode;
- second doping an impurity element of one conductivity to the first electrode and the insulating layer;
- forming a layer including an organic compound over the first electrode;
- and
- forming a second electrode over the layer including an organic compound,
- wherein at the first doping step, a high concentration impurity region is formed in a semiconductor layer of the thin film transistor.
8 more elements
A manufacturing method of a display device comprising:
- forming a thin film transistor over a substrate;
- forming an interlayer insulating film over the thin film transistor;
- removing the interlayer insulating film selectively so that at least one opening is formed in the interlayer insulating film and a side surface of the interlayer insulating film has a tapered shape at an edge of the substrate;
- forming a first electrode electrically connected to the thin film transistor over the interlayer insulating film;
- doping an impurity element of one conductivity to the opening portion, the side surface of the interlayer insulating film, and the first electrode;
- forming an insulating layer covering an edge of the first electrode;
- forming a layer including an organic compound over the first electrode;
- and
- forming a second electrode over the layer including an organic compound.
6 more elements
Dependencies are inferred from the claim text.