Semiconductor display device

A semiconductor display device comprising:

• at least first, second and third thin film transistors;
• a first interlayer insulating film formed so as to cover the first, second and third thin film transistors;
• first, second, third, fourth and fifth wirings formed so as to be in contact with a surface of the first interlayer insulating film;
• a second interlayer insulating film formed over the first interlayer insulating film covering the first, second, third, fourth and fifth wirings;
• sixth and seventh wirings formed so as to be in contact with a surface of the second interlayer insulating film;
• and
• a display element which is formed so as to be in contact with the surface of the second interlayer insulating film and connected to the seventh wiring,
• wherein the first wiring is connected to a first terminal and a gate electrode included in the first thin film transistor through first and second contact holes formed in the first interlayer insulating film;
• wherein the second wiring is connected to a second terminal included in the first thin film transistor through a third contact hole formed in the first interlayer insulating film;
• wherein the third wiring is connected to a first terminal and a gate electrode included in the second thin film transistor through fourth and fifth contact holes formed in the first interlayer insulating film;
• wherein the fourth wiring is connected to a second terminal included in the second thin film transistor through a sixth contact hole formed in the first interlayer insulating film;
• wherein the fifth wiring is connected to a first terminal or a second terminal included in the third thin film transistor through a seventh contact hole formed in the first interlayer insulating film;
• wherein the sixth wiring is connected to the second and the third wirings through eighth and ninth contact holes formed in the second interlayer insulating film;
• and
• wherein the seventh wiring is connected to the fifth wiring through a tenth contact hole formed in the second interlayer insulating film.

A semiconductor display device comprising:

• at least first, second and third thin film transistors;
• a first interlayer insulating film formed so as to cover the first, second and third thin film transistors;
• first, second, third and fourth wirings formed so as to be in contact with a surface of the first interlayer insulating film;
• a second interlayer insulating film formed over the first interlayer insulating film covering the first, second, third and fourth wirings;
• fifth and sixth wirings formed so as to be in contact with a surface of the second interlayer insulating film;
• and
• a display element formed so as to be in contact with the surface of the second interlayer insulating film and connected to the sixth wiring,
• wherein the first wiring is connected to a first terminal and a gate electrode included in the first thin film transistor through first and second contact holes formed in the first interlayer insulating film;
• wherein the second wiring is connected to a second terminal included in the first thin film transistor and a first terminal and a gate electrode included in the second thin film transistor through third, fourth and fifth contact holes formed in the first interlayer insulting film;
• wherein the third wiring is connected to a second terminal included in the second thin film transistor through a sixth contact hole formed in the first interlayer insulating film;
• wherein the fourth wiring is connected to a first terminal or a second terminal included in the third thin film transistor through a seventh contact hole formed in the first interlayer insulating film;
• wherein the fifth wiring is connected to the second wiring through eighth and ninth contact holes formed in the second interlayer insulating film;
• and
• wherein the sixth wiring is connected to the fourth wiring through a tenth contact hole formed in the second interlayer insulating film.

A semiconductor device comprising:

• at least a thin film transistor over a substrate;
• a first interlayer insulating film formed over the thin film transistor;
• first and second wirings formed over the first interlayer insulating film;
• a second interlayer insulating film formed over the first interlayer insulating film, the first and second wirings;
• and
• a third wiring formed over the second interlayer insulating film,
• wherein the first wiring is electrically connected to a first terminal and a gate electrode included in the thin film transistor;
• wherein the second wiring is electrically connected to a second terminal included in the thin film transistor, and
• wherein the third wiring is electrically connected to the second wiring.

A semiconductor device comprising:

• at least first and second thin film transistors;
• a first interlayer insulating film formed over the first and second thin film transistors;
• first, second and third wirings formed over the first interlayer insulating film;
• a second interlayer insulating film formed over the first interlayer insulating film, the first, second and third wirings;
• and
• a fourth wiring formed over the second interlayer insulating film,
• wherein the first wiring is electrically connected to a first terminal and a gate electrode included in the first thin film transistor;
• wherein the second wiring is electrically connected to a second terminal included in the first thin film transistor and a first terminal and a gate electrode included in the second thin film transistor;
• wherein the third wiring is electrically connected to a second terminal included in the second thin film transistor, and
• wherein the fourth wiring is electrically connected to the second wiring.

A semiconductor display device comprising:

• a display element;
• a first thin film transistor for electrically connected to the display element;
• a driver circuit electrically connected to a signal line;
• and
• a protective circuit electrically connected to the signal line, the protective circuit comprising:
• at least first and second thin film transistors;
• a first interlayer insulating film formed over the first and second thin film transistors;
• first, second, third and fourth wirings formed over the first interlayer insulating film;
• a second interlayer insulating film formed over the first interlayer insulating film, the first, second, third and fourth wirings;
• and
• a fifth wiring formed over the second interlayer insulating film,
• wherein the first wiring is electrically connected to a first terminal and a gate electrode included in the first thin film transistor;
• wherein the second wiring is electrically connected to a second terminal included in the first thin film transistor;
• wherein the third wiring is electrically connected to a first terminal and a gate electrode included in the second thin film transistor;
• wherein the fourth wiring is electrically connected to a second terminal included in the second thin film transistor, and
• wherein the fifth wiring is electrically connected to the second, the third wiring.