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US 2005/0087515 A1Published application
Endpoint detection using laser interferometry
AssigneeTokyo Electron Limited
InventorDeana Delp
Life of this patent
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Abstract
A method and system for determining an endpoint in a (near) real-time environment using statistical process control. By utilizing such control, an endpoint of a semiconductor process (e.g., an etch) can be monitored. Monitoring may lead to increased yields by avoiding or reducing error conditions (e.g., under- or over-etching).
Claims6
A method of monitoring a semiconductor process comprising:
- obtaining measurements from an ongoing semiconductor process using laser interferometry;
- generating at least one control chart using statistical process control techniques during the ongoing semiconductor process;
- and
- determining if the ongoing semiconductor process is operating within design constraints using the at least one control chart.
1 more element
Dependencies are inferred from the claim text.