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AssigneeTokyo Electron Limited
InventorsTsuyoshi Moriya, Hiroshi Nagaike, Teruyuki Hayashi, Kaoru Fujihara
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In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.
A particle sticking prevention apparatus comprising:
An atmospheric transfer apparatus that transfers a substrate to be processed, comprising:
A vacuum transfer apparatus that transfers a substrate to be processed, comprising:
A semiconductor manufacturing unit that carries and processes a semiconductor substrate, comprising:
A particle sticking preventing method comprising:
A particle sticking preventing method for generating, around a member disposed in a chamber, an electric field of the same polarity as a charged polarity of particles in an environment of the chamber, thereby preventing the particles from sticking to the member.
A plasma processing apparatus comprising:
A plasma processing method for processing a member disposed in a processing chamber with plasma, the method comprising:
A plasma processing method for processing with plasma a member mounted on a mounting table in a processing chamber, the method comprising:
A plasma processing method for changing a gas introduced in a plasma processing chamber into plasma, the method comprising:
Dependencies are inferred from the claim text.