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US 2005/0037599 A1Published application
Process for fabricating strained layers of silicon or of a silicon/germanium alloy
AssigneeSTMicroelectronics S.r.l.
InventorsAomar Halimaoui, Daniel Bensahel
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Abstract
A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; and b) the modification of the lattice parameter.
Claims13
A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, comprising:
- a) formation of a layer of silicon or of a silicon/germanium alloy on a layer of a material having a modifiable lattice parameter;
- and
- b) modification of the lattice parameter.
A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, comprising:
- formation of a layer of silicon or of a silicon/germanium alloy on a layer of a material having a modifiable lattice parameter, wherein the material having a modifiable lattice parameter comprises porous silicon;
- and
- modification of the lattice parameter by at least one of:
- immersing the material in a hydrofluoric acid solution;
- applying a heat treatment to the material;
- and
- replacing hydrogen atoms in the layer of material having a modifiable lattice parameter with another species, preferably methyl groups.
4 more elements
Dependencies are inferred from the claim text.