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US 2005/0037598 A1Published application
Method for producing polycrystalline silicon germanium and suitable for micromachining
OwnerAnn Witvrouwinventor
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Abstract
The invention relates to methods for preparing as-deposited, low-stress and low resistivity polycrystalline silicon-germanium layers and semiconductor devices utilizing the silicon-germanium layers. These layers can be used in Micro Electro-Mechanical Systems (MEMS) devices or micro-machined structures.
Claims20
A method of producing a polycrystalline SiGe layer on a substrate, the method comprising:
- a) depositing onto the substrate a first layer comprising a polycrystalline silicon-germanium, wherein the depositing comprises non-plasma chemical vapor deposition conducted at a first temperature less than or equal to about 520° C.;
- and
- b) depositing onto the first layer a second layer comprising a polycrystalline silicon-germanium, wherein the depositing comprises plasma enhanced chemical vapor deposition or plasma assisted chemical vapor deposition at a second temperature less than or equal to about 520° C., whereby a polycrystalline SiGe layer comprising the first layer and the second layer is obtained.
A method of producing a polycrystalline SiGe layer on a substrate, the method comprising:
- a) depositing onto the substrate a first layer comprising a polycrystalline silicon-germanium by a non-plasma chemical vapor deposition technique at a temperature of less than or equal to 520° C. and at a rate of less than about 10 nm/min;
- and
- b) depositing onto the first layer a second layer comprising a polycrystalline silicon-germanium by a plasma enhanced chemical vapor deposition technique at a temperature of less than or equal to 520° C. and at a rate of about 50 nm/min or more, whereby a polycrystalline SiGe layer comprising the first layer and the second layer is obtained.
Dependencies are inferred from the claim text.