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US 2005/0037592 A1Published application
Devices having improved capacitance and methods of their fabrication
AssigneeMicron Technology, Inc.
InventorKarl Robinson
Life of this patent
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Abstract
A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.
Claims31
A capacitor formed by a process comprising:
- forming a metal capacitor plate on a substrate assembly;
- applying a potential across the metal capacitor plate;
- and
- oxidizing at least a portion of the metal capacitor plate to form at least a portion of a dielectric layer.
1 more element
A capacitor formed by a process comprising:
- forming a metal layer on a starting substrate;
- contacting the metal layer with an electrolytic solution;
- applying a potential across the electrolytic solution and the metal layer;
- and
- oxidizing at least a portion of the metal layer to form at least a portion of a dielectric layer.
2 more elements
A capacitor formed by a process comprising:
- forming a metal layer overlying a starting substrate formed from silicon dioxide, the metal layer being formed from at least one metal selected from the group consisting of titanium, copper, gold, tungsten, and nickel, alloyed with at least one additional metal selected from the group consisting of strontium, barium, and lead;
- contacting the metal layer with an electrolytic solution;
- applying a potential across the electrolytic solution and the metal layer;
- and
- oxidizing at least a portion of the metal layer to form an oxidized layer forming at least a portion of the dielectric layer.
2 more elements
A capacitor formed by a process comprising:
- forming a metal capacitor plate on a substrate assembly, the metal capacitor plate being formed from at least one metal selected from the group consisting of titanium, copper, gold, tungsten, and nickel alloyed with at least one additional metal selected from the group consisting of strontium, barium, and lead;
- applying a potential across the metal capacitor plate;
- and
- oxidizing at least a portion of the metal capacitor plate to form at least a portion of the dielectric layer.
1 more element
A method of forming capacitor, the method comprising:
- forming a conductive capacitor plate on a substrate;
- forming a metal layer overlying the substrate;
- applying a potential across the metal layer;
- and
- oxidizing at least a portion of the metal layer to form an oxidized layer, wherein the oxidized layer forms a dielectric of the capacitor.
2 more elements
A method of forming a capacitor, the method comprising:
- forming a conductive capacitor plate on a substrate;
- forming a metal layer overlying the substrate;
- applying a potential across the metal layer;
- oxidizing a portion of the metal layer to form an oxidized layer, wherein the oxidized layer forms at least a portion of a dielectric of the capacitor;
- mechanically planarizing the oxidized layer to form a planarized oxidized layer;
- and
- forming a second conductive capacitor plate over the planarized oxidized layer.
4 more elements
Dependencies are inferred from the claim text.