Method for producing a capacitor
AssigneeInfineoon Technologies AG
InventorsClaus Dahl, Knut Stahrenberg, Christoph Wilbertz
Life of this patent
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Abstract
A method for producing a capacitor comprises providing a raw structure having a substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by an isolating layer. Above the first and second areas, an electrically conductive layer is arranged on the at least one dielectric layer. Further, a mask layer is deposited on the electrically conductive layer, wherein it is structured for generating a first mask above the first area. The method further comprises etching away the electrically conductive layer and at least one of the dielectric layers in the second area by means of the first mask and completing an active device in the second area.
Claims20
A method for manufacturing a capacitor, comprising:
- providing a raw structure having a doped substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by an electrically isolating structure, the first area being arranged between first and second isolation areas of the isolating structure, the doped substrate in the first area representing a first capacitor electrode of the capacitor;
- applying an electrically conductive layer on the at least one dielectric layer above the first and the second area;
- applying a mask layer on the electrically conductive layer and patterning the mask layer for forming a mask above the first area;
- etching away the electrically conductive layer and at least one of the at least one dielectric layer in the second area with the mask above the first area, so that the electrically conductive layer and the at least one dielectric layer are removed outside the first area, whereby in the first area, a second capacitor electrode is formed from the conductive layer, and a patterned capacitor dielectric layer is formed from the dielectric layer;
- and
- forming elements of an active device in the second area.
A method for manufacturing a capacitor, comprising:
- providing a first structure having a doped substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by an electrically isolating structure, the first area being arranged between first and second isolation areas of the isolating structure;
- forming an electrically conductive layer on the at least one dielectric layer above the first area and the second area;
- disposing a mask layer on the electrically conductive layer and patterning the mask layer to form a mask above the first area;
- etching away an unmasked portion of the electrically conductive layer and an unmasked portion of at least one of the at least one dielectric layer in the second area;
- and
- forming elements of an active device in the second area.
Dependencies are inferred from the claim text.