Method of fabricating an oxide collar for a trench capacitor

A method for fabricating patterned ceramic layers on areas of a relief that are arranged essentially perpendicular to a substrate surface, comprising:

• providing a semiconductor substrate;
• forming relief structures within a top side of the substrate, wherein internal areas are arranged essentially perpendicular to the top side of the substrate;
• filling the relief structures with a resist to a relief depth, wherein a resist layer is obtained;
• and
• depositing a ceramic layer synthesized from a ceramic material by means of a low temperature deposition method, wherein the low temperature deposition method is performed at a temperature lower than a softening temperature of the resist.

A method for fabricating patterned ceramic layers on areas of a relief structure formed within a substrate, comprising:

• providing a semiconductor substrate;
• forming relief structures within a top side of the substrate;
• filling the relief structures with a resist to a relief depth, wherein a resist layer is obtained;
• depositing a ceramic layer synthesized from a ceramic material by means of a low temperature ALD method;
• anisotropic etching of the ceramic layer, wherein the ceramic layer remains on an inner surface of the relief structure, and wherein a top side of the resist layer situated below the ceramic layer is at least partially uncovered;
• and
• removing the resist layer.