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US 2005/0037557 A1Published application
Transition metal alloys for use as a gate electrode and devices incorporating these alloys
AssigneeIntel Corporation
InventorsMark Doczy, Nathan Baxter, Robert Chau, Kari Harkonen, Teemu Lang
Life of this patent
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Abstract
Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.
Claims45
An alloy comprising:
- approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium;
- approximately 30 to 60 atomic percent of carbon;
- and
- up to approximately 20 atomic percent of aluminum.
1 more element
An alloy comprising:
- approximately 20 to 50 atomic percent of a transition metal;
- approximately 30 to 60 atomic percent of a combination of one or more elements, the combination of elements including at least one of carbon, nitrogen, silicon, germanium, and boron;
- and
- up to approximately 20 atomic percent of a dopant.
1 more element
An alloy comprising:
- approximately 37 atomic percent of titanium;
- approximately 55 atomic percent of carbon;
- and
- approximately 3 atomic percent of aluminum;
- wherein the alloy has a work function of between approximately 3.8 eV and 4.4 eV.
2 more elements
A device comprising:
- a substrate having a source region and a drain region formed therein;
- an insulating layer disposed on the substrate and extending between the source and drain regions;
- and
- a gate electrode overlying the insulating layer, the gate electrode formed of an alloy including
- approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium,
- approximately 30 to 60 atomic percent of carbon, and
- up to approximately 20 atomic percent of aluminum
4 more elements
A device comprising:
- a substrate having a source region and a drain region formed therein;
- an insulating layer disposed on the substrate and extending between the source and drain regions;
- and
- a gate electrode overlying the insulating layer, the gate electrode formed of an alloy including
- approximately 20 to 50 atomic percent of a transition metal,
- approximately 30 to 60 atomic percent of a combination of one or more elements, the combination of elements including at least one of carbon, nitrogen, silicon, germanium, and boron, and
- up to approximately 20 atomic percent of a dopant.
4 more elements
A method comprising:
- depositing a layer of insulating material on a substrate;
- and
- depositing a layer of an alloy over the insulating layer, the alloy including
- approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium,
- approximately 30 to 60 atomic percent of carbon, and
- up to approximately 20 atomic percent of aluminum.
3 more elements
Dependencies are inferred from the claim text.