Formation of self-organized stacked islands for self-aligned contacts of low dimensional structures

Abstract

Method for making a semiconductor structure is proposed. It comprises the steps: -providing a base layer (10) having a first lattice constant, -forming buried islands on the base layer (10) having a second lattice constant that is smaller or larger than the first lattice constant, -at least partially covering the base layer (10) and the buried islands with a cover layer (14), whereby the cover layer (14) has a locally increased or reduced lattice constant in areas above the buried islands, -growing small islands (15) on the areas of the cover layer (14) with locally increased or reduced lattice constant, -depositing a thin layer (16) at least partially covering the cover layer (14) and the small islands (15), -at least partially removing the small islands (15) to provide for an opening (17) being positioned exactly above the buried islands.

Dependencies are inferred from the claim text.