Semiconductor device having a random grained polysilicon layer and a method for its manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Lin Chen, Liang-Gi Yao, Shih-Chang Chen
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Abstract
A semiconductor device having a random grained polysilicon layer and a method for its manufacture are provided. In one example, the device includes a semiconductor substrate and an insulator layer on the substrate. A first polysilicon layer having a random grained structure is positioned above the insulator layer, a semiconductor alloy layer is positioned above the first polysilicon layer, and a second polysilicon layer is positioned above the semiconductor alloy layer.
Claims36
A method for fabricating a structure for a semiconductor device, the method comprising:
- forming an insulator layer on a semiconductor substrate;
- forming a random grained polysilicon layer on the insulator layer, wherein forming the random grained polysilicon layer includes using a hydrogen treatment;
- forming an alloy layer above the random grained polysilicon layer;
- and
- forming a semiconductor layer above the alloy layer.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulator layer on the substrate;
- a first polysilicon layer positioned above the insulator layer, wherein the first polysilicon layer has a random grained structure;
- a second polysilicon layer positioned above the first polysilicon layer;
- and
- a semiconductor alloy layer positioned between the first and second polysilicon layers.
A method for forming a gate structure for a MOSFET device, the method comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- forming a first polysilicon layer comprised of random grains on the gate dielectric layer, wherein the forming includes using an in situ hydrogen treatment;
- forming a silicon-germanium (Si—Ge) layer on the first polysilicon layer;
- forming a second polysilicon layer;
- and
- performing a patterning procedure to define the gate structure.
Dependencies are inferred from the claim text.