Semiconductor device and method for forming the same

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over a substrate;
• crystallizing the semiconductor film by irradiating a laser light;
• forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;
• forming a gate electrode in contact with the gate insulating film;
• forming a metal layer in contact with a portion of the crystalline semiconductor film;
• and
• forming a metal silicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by irradiating an infrared light.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over a substrate;
• crystallizing the semiconductor film by irradiating a laser light;
• forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;
• forming a gate electrode in contact with the gate insulating film;
• forming a metal layer in contact with a portion of the crystalline semiconductor film;
• and
• forming a metal silicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by heating.

A semiconductor device comprising:

• a semiconductor film formed over a substrate;
• a channel regions and source and drain regions formed in the semiconductor film;
• and
• a metal silicide layer formed on each of the source and drain regions,
• wherein a thickness of the metal silicide layer is 10 nm to 1 μm.