US 2005/0037537 A1 · Method for manufacturing semiconductor devices

Abstract

A method for manufacturing semiconductor devices is provided in which an organic adhesive layer is formed on the backside of a semiconductor wafer after being thinned by a backlapping process and cured to form a B-stage adhesive layer. Using the B-stage adhesive layer, the semiconductor device may then be attached to a circuit substrate and then subjected to additional curing to form a C-stage adhesive layer. Such semiconductor devices may also be attached directly to a lower semiconductor chip or, in the alternative, may be attached to a spacer mounted that is or will be mounted on a lower semiconductor chip or the circuit substrate. The organic adhesive is selected to counteract stresses induced by a passivation layer formed on the active surface, thereby reducing or preventing warping of the semiconductor wafer and eliminating the need for a separate resin paste adhesive during the chip attaching process.

Claims20

Dependent claims

A method for manufacturing semiconductor devices comprising:

forming an array of semiconductor chips on an active surface of a semiconductor wafer, the semiconductor wafer also including a backside surface and having an initial thickness;
removing a portion of the initial thickness of the semiconductor wafer from the backside surface to form a thinned semiconductor wafer having a secondary backside surface;
applying an organic adhesive layer to the secondary backside surface;
curing the layer of organic adhesive to form a B-stage adhesive layer;
sawing the thinned semiconductor substrate and the B-stage adhesive layer to separate the array of semiconductor chips into a plurality of individual semiconductor chips, each of the individual semiconductor chips including a portion of the B-stage adhesive layer;
attaching one of the individual semiconductor chips to a circuit substrate using the portion of the B-stage adhesive layer;
and
curing the portion of the B-stage adhesive layer to form a C-stage adhesive portion.

5 more elements

A method for manufacturing semiconductor devices comprising:

forming an array of first semiconductor chips on an active surface of a first semiconductor wafer, the first semiconductor wafer also including a backside surface and having an initial thickness;
removing a portion of the initial thickness of the first semiconductor wafer from the backside surface to form a first thinned semiconductor wafer having a secondary backside surface;
applying a first organic adhesive layer to the secondary backside surface of the first thinned semiconductor wafer;
curing the layer of organic adhesive to form a first B-stage adhesive layer;
sawing the first thinned semiconductor substrate and the B-stage adhesive layer to separate the array of first semiconductor chips into a plurality of individual first semiconductor chips, each of the individual first semiconductor chips including an active surface and a backside surface and a portion of the first B-stage adhesive layer on the backside surface;
attaching one of the individual first semiconductor chips to a circuit substrate using the portion of the first B-stage adhesive layer;
curing the portion of the first B-stage adhesive layer to form a first C-stage adhesive portion
forming an array of second semiconductor chips on an active surface of a second semiconductor wafer, the second semiconductor wafer also including a backside surface and having an initial thickness;
removing a portion of the initial thickness of the second semiconductor wafer from the backside surface to form a second thinned semiconductor wafer having a secondary backside surface;
applying a second organic adhesive layer to the secondary backside surface of the second thinned semiconductor wafer;
curing the second layer of organic adhesive to form a second B-stage adhesive layer;
sawing the second thinned semiconductor substrate and the second B-stage adhesive layer to separate the array of second semiconductor chips into a plurality of individual second semiconductor chips, each of the individual second semiconductor chips including a portion of the second B-stage adhesive layer;
attaching one of the individual second semiconductor chips to the first semiconductor chip;
and
curing the portion of the first B-stage adhesive layer to form a first C-stage adhesive portions.

12 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor devices

Life of this patent

Method for manufacturing semiconductor devices

Life of this patent

Abstract

Claims20