Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer

A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer, comprising:

• depositing, by MOCVD, a seed layer of highly crystalline PCMO thin film, having a thickness of between about 50 Å to 300 Å,
• depositing a second PCMO thin film layer on the seed layer, by spin coating, having a thickness of between about 500 Å to 3000 Å, to form a combined PCMO thin film layer;
• increasing the resistance of the combined PCMO thin film layer in a semiconductor device by applying a negative electric pulse;
• and
• decreasing the resistance of the combined PCMO thin film layer in a semiconductor device by applying a positive electric pulse.

A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer, comprising:

• depositing a seed layer of PCMO thin film by MOCVD;
• depositing a second PCMO thin film layer on the seed layer by spin coating wherein the thickness of a combined PCMO thin film layer is between about 500 Å to 3000 Å;
• writing to the combined PCMO thin film layer in a semiconductor device by applying a negative electric pulse of between about −4V to −5V, having a pulse width of between about 75 nsec to 1 μsec;
• and
• resetting the combined PCMO thin film layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 μsec.