High resistance polyaniline blend for use in high efficiency pixellated polymer electroluminescent devices
AssigneeE. I. Du Pont de Nemours and Company
InventorChi Zhang
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Abstract
Compositions are provided comprising polyaniline (PANI) with poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAAMPSA) as the counterion (PANI/PAAMPSA) and an amount of poly(styrenesulfonic acid) (PSS) sufficient to reduce the conductivity of the composition relative to PANI/PAAMPSA. Invention compositions may further comprise poly(acrylamide) (PAM). Invention compositions are useful as high resistance buffer layers for use in electroluminescent devices (such as, organic light emitting diodes (OLEDs)).
Claims27
A composition comprising polyaniline (PANI), poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAAMPSA), and an amount of poly(styrenesulfonic acid) (PSS) sufficient to reduce the conductivity of said composition.
A high resistance buffer layer comprising PANI/PAAMPSA and PSS.
A high resistance film comprising PANI/PMMAPSA and PSS.
An organic light emitting diode (OLED) comprising a high resistance buffer layer comprising PANI/PMMPSA and PSS.
An electronic device comprising a high resistance buffer layer comprising PANI/PMMPSA and PSS.
A method for reducing conductivity of a PANI/PAAMPSA film cast from aqueous solution onto a substrate to a value less than about 1×10−4 S/cm, said method comprising adding an effective amount of PSS to said aqueous solution.
Dependencies are inferred from the claim text.