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US 2005/0032318 A1Published application
Method for making a semiconductor device having a high-k gate dielectric
AssigneeIntel Corporation
InventorsRobert Chau, Reza Arghavani, Mark Doczy
Life of this patent
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Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.
Claims10
A method for making a semiconductor device comprising:
- forming a high-k gate dielectric layer on a substrate, the high-k gate dielectric layer including impurities;
- removing the impurities from the high-k gate dielectric layer;
- and then
- forming a gate electrode on the high-k gate dielectric layer.
1 more element
Dependencies are inferred from the claim text.