Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components

A method of fabricating a semiconductor device, comprising:

• forming a ferroelectric capacitor in a capacitor level above a semiconductor body;
• and
• forming a low silicon-hydrogen SiN layer above a transistor in the semiconductor device, the low silicon-hydrogen SiN layer being below the capacitor level, the low silicon-hydrogen SiN layer having an FTIR figure of merit value of about 0.05 or less, wherein the FTIR figure of merit is calculated as:
• Si—H absorbance/(N—H absorbance×1.4).

A semiconductor device, comprising:

• a ferroelectric capacitor formed in a capacitor level above a semiconductor body;
• and
• a hydrogen barrier above the ferroelectric capacitor, the hydrogen barrier comprising a low silicon-hydrogen SiN layer having an FTIR figure of merit value of about 0.05 or less, wherein the FTIR figure of merit is calculated as:
• Si—H absorbance/(N—H absorbance×1.4).

A semiconductor device, comprising:

• a ferroelectric capacitor formed in a capacitor level above a semiconductor body;
• and
• a hydrogen barrier above a transistor and below the capacitor level in the semiconductor device, the hydrogen barrier comprising a low silicon-hydrogen SiN layer having an FTIR figure of merit value of about 0.05 or less, wherein the FTIR figure of merit is calculated as:
• Si—H absorbance/(N—H absorbance×1.4).