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US 2005/0031991 A1Published application
Process for producing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi Okino, Koji Asakawa, Naomi Shida, Toru Ushirogouchi, Satoshi Saito
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Abstract
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
Claims8
1-29 (Canceled).
30:
- A process for producing a semiconductor device, comprising the steps of:
- forming, on an etching film formed on a substrate, a film containing a resist composition which comprises a resist resin obtained by copolymerizing at least one monomer selected from monomers represented by the general formulas (I-1) and (I-2):
- wherein R is acryloyl or methacryloyl group, R11 and R12 are hydrogen atom or a monovalent alkyl group, with proviso that at least one of R11 and R12 is monovalent alkyl group, and R13 is oh group, ═O group, COOH group or COOR14 group, wherein R14 is a monovalent organic group,
- and at least one monomer selected from monomers represented by the general formulas (I-3), (I-4), (I-5), (I-6) and (I-7):
- wherein R is an acryloyl or methacryloyl group, R31 is hydrogen atom, or at least one group selected from the group consisting of OH group, OR14 group, wherein R14 is a monovalent organic group, and ═O group, R32 is hydrogen atom or a monovalent organic group, and R41 is vinyl, acryloyl or methacryloyl group, and a photo acid generator,
- subjecting the film coated onto the substrate to pattern-wise exposure,
- developing the film exposed to light, thereby forming a patterned photomask, and
- etching an etching film by dry etching, using the photomask as a mask.
5 more elements
31:
- The process for producing a semiconductor device according to claim 30, wherein the monovalent alkyl group is selected from the group consisting of methyl, ethyl, propyl, and iso-propyl groups.
32:
- The process for producing a semiconductor device according to claim 30, wherein both R11 and R12 are monovalent alkyl groups.
33:
- The process for producing a semiconductor device according to claim 32, wherein the monovalent alkyl group is selected from the group consisting of methyl, ethyl, propyl, and iso-propyl groups.
34:
- The process for producing a semiconductor device according to claim 30, wherein R13 is ═O group.
35:
- The process for producing a semiconductor device according to claim 30, wherein at least one of R11 and R12 contained in the resist resin is selected from the group consisting of C2H5 group, C3H7 group and C4H9 group.
36:
- The process for producing a semiconductor device according to claim 30, wherein R13 is combined with a tertiary carbon atom.