Barrier layer for electroplating processes

A method of preparing a surface for electrochemical deposition, comprising:

• forming a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm on the surface by forming a first barrier layer over the surface using chemical vapor deposition and by forming a second barrier layer over the first barrier layer using physical vapor deposition, wherein the second barrier layer is deposited at a processing pressure less than about 100 mTorr;
• and
• depositing a copper seed layer over the high conductance barrier layer utilizing high density plasma physical vapor deposition.

A method of forming a high conductance barrier layer, comprising:

• depositing a first barrier layer to a thickness less than about 250 Å so as to provide a conformal barrier layer over a surface;
• and
• depositing a second barrier layer to a thickness less than about 250 Å over the first barrier layer using physical vapor deposition, wherein the second barrier layer comprises a material selected from the group consisting of tantalum, tantalum nitride, and combinations thereof, wherein the first barrier layer and the second barrier layer form a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm.

A method of preparing a surface for electrochemical deposition, comprising:

• forming a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm on the surface by depositing a first barrier layer so as to provide a conformal barrier layer over the surface and by depositing a second barrier layer over the first barrier layer using physical vapor deposition, wherein the second barrier layer is deposited at a processing pressure less than about 100 mTorr;
• and
• depositing a copper seed layer over the high conductance barrier layer utilizing high density plasma physical vapor deposition.

A method of forming a high conductance barrier layer, comprising:

• depositing a first barrier layer to a thickness less than about 250 Å so as to provide a conformal barrier layer over a surface;
• and
• depositing a second barrier layer to a thickness less than about 250 Å over the first barrier layer using chemical vapor deposition or physical vapor deposition, wherein the second barrier layer comprises a material selected from the group consisting of tungsten, tungsten nitride, and combinations thereof, wherein the first barrier layer and the second barrier layer form a high conductance barrier layer having a resistivity of less than about 160 μΩ-cm.