Semiconductor light emitting element

A semiconductor light emitting element, comprising:

• a substrate;
• a light emitting layer;
• a resonator comprising first and second reflecting films disposed on opposite sides of the light emitting layer, wherein the first reflecting film comprises AlxGa1-xAs (0≦x≦1) and the second reflecting film comprises AlyGazIn1-y-zP (0≦y≦1,0≦z≦1);
• an n-type layer formed on the side of the light emitting layer opposite the side on which the substrate is provided and having an opening formed therein;
• a current diffusion layer formed on the n-type layer;
• and
• an electrode formed on the current diffusion layer,
• wherein the first reflecting film is disposed on the same side of the light emitting layer as the substrate.

A semiconductor light emitting element, comprising:

• a substrate;
• a light emitting layer;
• a resonator comprising first and second reflecting films disposed on opposite sides of the light emitting layer, wherein the first reflecting film comprises AlxGa1-xAs (0≦x≦1) and the second reflecting film comprises AlyGazIn1-y-zP (0≦y≦1,0≦z≦1);
• a contact layer formed on the side of the light emitting layer opposite the side on which the substrate is provided;
• an insulating layer formed on the contact layer and provided with an opening therein which exposes a portion of the contact layer;
• and
• an ITO film formed on the insulating layer and the exposed portion of the contact layer,
• wherein the first reflecting film is disposed on the same side of the light emitting layer as the substrate.