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US 2005/0030784 A1Published application
Optically accessible phase change memory
AssigneeOvonyx, Inc.
InventorBrian Johnson
Life of this patent
Estimating the term…
Abstract
A phase change memory may be configured to enable both optical and electrical accessing of the memory. In one embodiment, each cell may be electrically accessed by a laser beam, and at the same time each cell may be electrically accessed by electrical addressing signals.
Claims36
A method comprising:
- enabling a phase change memory to be both optically and electrically accessed.
A memory comprising:
- a light accessible phase change material;
- and
- a circuit to electrically access said phase change material.
A system comprising:
- a processor-based device;
- a wireless interface coupled to said processor-based device;
- and
- a semiconductor memory coupled to said device, said memory including a light accessible phase change material and a circuit to electrically access said phase change material.
1 more element
A method comprising:
- optically accessing a phase change memory material;
- and
- electrically accessing the phase change memory material.
Dependencies are inferred from the claim text.