Semiconductor device whose semiconductor chip has chamfered backside surface edges and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming trenches from a major surface side of a semiconductor wafer having an element formed thereon, along dicing lines or chip division lines of the semiconductor wafer, the trenches having a depth not to reach a backside surface of the semiconductor wafer;
• removably affixing a surface protection tape to an element formation surface of the semiconductor wafer;
• executing backside grinding of the semiconductor wafer to simultaneously thin the semiconductor wafer and separate the semiconductor wafer into individual semiconductor substrates;
• and
• forming curved surfaces having a radius of curvature of 0.5 to 50 μm at at least some of portions where side surfaces and a backside surface of the semiconductor substrate cross.