Device for capacitive pressure measurement and method for manufacturing a capacitive pressure measuring device

A method for manufacturing a device for capacitive pressure measurement, comprising the steps of:

• arranging a conductive polycrystalline semiconductor layer between two insulating layers on a semiconductor substrate to form a base electrode;
• and
• integrating onto the semiconductor substrate:
• (a) the base electrode;
• (b) a mechanically deflectable counterelectrode composed of a layer made of at least one of (a) a monocrystalline semiconductor material and (b) a polycrystalline semiconductor material;
• (c) a contact arrangement configured to electrically connect the base electrode and the counterelectrode;
• and
• (d) at least one semiconductor component.

A device for capacitive pressure measurement, comprising:

• insulated base electrode means;
• mechanically deflectable counterelectrode means including a layer made of at least one of (a) a monocrystalline semiconductor material and (b) a polycrystalline semiconductor material;
• contact means for electrically connecting the electrode and the counterelectrode;
• and
• at least one semiconductor component means;
• wherein the base electrode means, the counterelectrode means, the contact means and the semiconductor component means are integrated onto semiconductor substrate means;
• and
• wherein a connecting means of the contact means of the base electrode means to metal plating means includes a dielectrically insulated conductive polycrystalline semiconductor layer.