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AssigneeSeiko Epson Corporation
InventorsIchio Yudasaka, Masahiro Furusawa, Takashi Aoki
Estimating the term…
There is provided a transistor and a method of manufacturing this transistor that allow a high degree of freedom when designing a wiring structure and also allow an improvement in product quality to be achieved. The transistor includes a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and also a gate insulating film and a gate electrode. The semiconductor film containing the source area and the semiconductor film containing the drain area are formed separately sandwiching both sides of an insulating member. The semiconductor film containing the channel area is formed on top of the insulating member.
A transistor comprising a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and a gate insulating film, and a gate electrode, wherein
An electro-optic device including a transistor as a switching element and an electro-optic layer driven by the transistor, the transistor comprising:
A method of manufacturing a transistor including a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and a gate insulating film, and a gate electrode, comprising the steps of:
Dependencies are inferred from the claim text.