Method and apparatus for forming an integrated circuit electrode having a reduced contact area
AssigneeMicron Technology, Inc.
InventorSteven Harshfield
Life of this patent
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Abstract
A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.
Claims48
1-16. (cancelled)
A memory device having at least one memory cell, the memory cell having a storage element comprising:
- a substrate having a first surface and having an opening therein extending from the first surface of the substrate to a bottom surface of the opening;
- a conductive material disposed within the opening, the conductive material having a first portion extending from the first surface of the substrate to the bottom surface of the opening and a second portion extending generally along the bottom surface of the opening, wherein a lateral dimension of the first portion of the conductive material is less than a lateral dimension of the second portion of the conductive material;
- and
- a memory element electrically coupled to the first portion of the conductive material.
A memory device having at least one memory cell, the memory cell having a storage element comprising:
- a dielectric substrate having a first surface and having an opening therein extending from the first surface of the substrate to a bottom surface of the opening;
- a conductive material disposed within the opening, the conductive material having a first portion extending from the first surface of the dielectric substrate to the bottom surface of the opening and a second portion extending generally along the bottom surface of the opening, wherein a lateral dimension of the first portion of the conductive material is less than 50 percent of a lateral dimension of the second portion of the conductive material;
- and
- a memory element electrically coupled to the first portion of the conductive material.
A memory device having at least one memory cell, the memory cell having a storage element comprising:
- a dielectric substrate having a conductive material disposed therein, the dielectric substrate having a surface, the conductive materail having a first portion extending from the surface into the dielectric substrate in a direction substantially perpendicular to the surface, and the conductive material having a second portion disposed within the dielectric substrate and extending in a direction substantially parallel to the surface;
- and
- a memory element electrically coupled to the first portion of the conductive material.
A memory device having at least one memory cell, the memory cell having a storage element comprising:
- a dielectric substrate having a conductive material disposed therein, the dielectric substrate having a surface, the conductive material having a first part extending from the surface into the dielectric substrate in a direction substantially perpendicular to the surface, and the conductive material having a second part disposed within the dielectric substrate and extending in a direction substantially parallel to the surface, wherein the dielectric substrate comprises a first type of dielectric material disposed laterally about the first part of the conductive material and a different type of dielectric material disposed laterally about the second part of the conductive material;
- and
- a memory element electrically coupled to the first part of the conductive material.
A memory device having at least one memory cell, the memory cell having a storage element comprising:
- a dielectric substrate having a conductive material disposed therein, the dielectric substrate having a surface, the conductive material having a first part extending from the surface into the dielectric substrate in a direction substantially perpendicular to the surface, and the conductive material having a second part disposed within the dielectric substrate and extending in a direction substantially parallel to the surface, wherein the dielectric substrate comprises a first type of dielectric material disposed about at least a portion of the first part of the conductive material and a different type of dielectric material disposed about the remainder the conductive material;
- and
- a memory element electrically coupled to the first part of the conductive material.
Dependencies are inferred from the claim text.