Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device

A substrate inspection apparatus comprising:

• an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected that has an insulator formed thereon as a primary beam under a condition such that the insulator is negatively charged;
• an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the primary beam and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate;
• and
• a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on said electron beam detector.

A substrate inspection method comprising:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected as a primary beam;
• projecting at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, as a secondary beam to cause imaging of the secondary beam;
• detecting an image caused by said imaging of the secondary beam and outputting a signal to form a one-dimensional or two-dimensional image of a surface of the substrate;
• and
• generating an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.

A substrate inspection method comprising:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected that has an insulator formed thereon as a primary beam under a condition such that the insulator is negatively charged;
• projecting at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the primary beam, as a secondary beam to cause imaging of the secondary beam;
• and
• detecting an image caused by said imaging of the secondary beam and outputting a signal to form a one-dimensional or two-dimensional image of a surface of the substrate.

A method of manufacturing a semiconductor device comprising a substrate inspection method, said substrate inspection method including:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected as a primary beam;
• projecting at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, as a secondary beam to cause imaging of the secondary beam;
• detecting an image caused by said imaging of the secondary beam and outputting a signal to form a one-dimensional or two-dimensional image of a surface of the substrate;
• and
• generating an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.

A method of manufacturing a semiconductor device comprising a substrate inspection method, said substrate inspection method including:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected that has an insulator formed thereon as a primary beam under a condition such that the insulator is negatively charged;
• projecting at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the primary beam, as a secondary beam to cause imaging of the secondary beam;
• and
• detecting an image caused by said imaging of the secondary beam and outputting a signal to form a one-dimensional or two-dimensional image of a surface of the substrate.

A substrate inspection apparatus comprising:

• an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam;
• an electron beam detector which exclusively detects a reflected electron among electrons generated from the substrate that has been irradiated by the primary beam, said reflected electron having an energy immediately after generation thereof substantially equivalent to an incident energy of the primary beam;
• and
• a mapping projection optical system which projects said reflected electron exclusively as a secondary beam and causes imaging of the secondary beam on said electron beam detector to an inspection image of one or two dimension.

A substrate inspection apparatus comprising:

• an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam;
• an electron beam detector which detects a reflected electron among electrons generated from the substrate that has been irradiated by the primary beam, said reflected electron having an energy immediately after generation thereof substantially equivalent to an incident energy of the primary beam;
• a mapping projection optical system which projects said reflected electron as a secondary beam and causes imaging of the secondary beam on said electron beam detector as an inspection image of one or two dimension;
• and
• a controller which controls at least one of said electron beam irradiation device, said mapping projection optical system and said electron beam detector on the basis of at least one of a first, a second and a third estimated values, said first estimated value being representative of an extent of distortion of the inspection image, said second estimated value being representative of a S/N of a signal outputted from said electron beam detector, and said third estimated value being representative of an extent of difference in contrast among materials in the inspection image when an area of the substrate to be inspected is constituted of a plurality of different materials.

A substrate inspection method comprising:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected as a primary beam;
• projecting exclusively a reflected electron among electrons generated from the substrate that has been irradiated by the primary beam, as a secondary beam to cause imaging of the secondary beam to an inspection image of one or two dimension, said reflected electron having an energy immediately after generation thereof substantially equivalent to an incident energy of the primary beam;
• and
• detecting said reflected electron at said imaging of the secondary beam to output a signal to form the inspection image of one or two dimension.

A substrate inspection method comprising:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected as a primary beam;
• projecting a reflected electron among electrons generated from the substrate that has been irradiated by the primary beam, as a secondary beam to cause imaging of the secondary beam to an inspection image of one or two dimension, said reflected electron having an energy immediately after generation thereof substantially equivalent to an incident energy of the primary beam;
• detecting said reflected electron at said imaging of the secondary beam to output a signal to form the inspection image of one or two dimension;
• and
• controlling at least one of the irradiation of the primary beam, a trajectory of the secondary beam and the detection of the electrons on the basis of at least one of a first, a second and a third estimated values, said first estimated value being representative of an extent of distortion of the inspection image, said second estimated value being representative of a S/N of the signal to form the inspection image, and said third estimated value being representative of an extent of difference in contrast among materials in the inspection image when an area of the substrate to be inspected is constituted of a plurality of different materials.

A method of manufacturing a semiconductor device comprising a substrate inspection method, said substrate inspection method including:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected as a primary beam;
• projecting exclusively a reflected electron among electrons generated from the substrate that has been irradiated by the primary beam, as a secondary beam to cause imaging of the secondary beam to an inspection image of one or two dimension, said reflected electron having an energy immediately after generation thereof substantially equivalent to an incident energy of the primary beam;
• and
• detecting said reflected electron at said imaging of the secondary beam to output a signal to form the inspection image of one or two dimension.

A method of manufacturing a semiconductor device comprising a substrate inspection method, said substrate inspection method including:

• emitting an electron beam and causing the electron beam to irradiate a substrate to be inspected as a primary beam;
• projecting a reflected electron among electrons generated from the substrate that has been irradiated by the primary beam, as a secondary beam to cause imaging of the secondary beam to an inspection image of one or two dimension, said reflected electron having an energy immediately after generation thereof substantially equivalent to an incident energy of the primary beam;
• detecting said reflected electron at said imaging of the secondary beam to output a signal to form the inspection image of one or two dimension;
• and
• controlling at least one of the irradiation of the primary beam, a trajectory of the secondary beam and the detection of the electrons on the basis of at least one of a first, a second and a third estimated values, said first estimated value being representative of an extent of distortion of the inspection image, said second estimated value being representative of a S/N of the signal to form the inspection image, and said third estimated value being representative of an extent of difference in contrast among materials in the inspection image when an area of the substrate to be inspected is constituted of a plurality of different materials.