Method of manufacturing thin-film magnetic head
AssigneeTDK Corporation
InventorsKoji Shimazawa, Yoshihiro Tsuchiya
Life of this patent
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Abstract
A lower shield layer is formed (S101). Subsequently, an MR device is formed (S103), and pinning/annealing is carried out (S105). The pinning/annealing provides exchange coupling between an antiferromagnetic layer and a pinned layer. Then, a domain control layer and electrode layers are formed (S107), and an upper shield layer is formed (S109). Thereafter, the domain control layer is magnetized in a direction yielding a longitudinal bias magnetic field (S111). Next, a recording head part is formed (S113). Then, a support in which a plurality of thin-film magnetic heads are formed so as to be arranged in a matrix is cut into a plurality of bars each comprising a plurality of thin-film magnetic heads arranged integrally (S115).
Claims8
A method of manufacturing a thin-film magnetic head comprising a magnetoresistive device including an antiferromagnetic layer, a ferromagnetic layer whose direction of magnetization is fixed upon exchange-coupling with the antiferromagnetic layer, a free layer whose direction of magnetization changes in response to external magnetization, and a nonmagnetic layer disposed between the ferromagnetic layer and the free layer;
- a domain control layer for regulating a magnetic domain of the free layer by applying a longitudinal bias magnetic field thereto;
- and first and second shield layers, disposed so as to oppose each other by way of the magnetoresistive device, for shielding the magnetoresistive device;
- the method comprising:
- a step of forming the first shield layer;
- a step of forming the magnetoresistive device, carried out after the step of forming the first shield layer;
- a heat treatment step of providing exchange coupling between the ferromagnetic layer and the antiferromagnetic layer so as to magnetize the ferromagnetic layer in a predetermined direction;
- a step of forming the domain control layer so as to hold the magnetoresistive device in a track width direction;
- a step of forming the second shield layer, carried out after the step of forming the domain control layer;
- and
- a step of forming the magnetizing the domain control layer in a direction yielding the longitudinal bias magnetic field, carried out after the step of forming the second shield layer.
A method of manufacturing a thin-film magnetic head comprising a magnetoresistive device including an antiferromagnetic layer, a ferromagnetic layer whose direction of magnetization is fixed upon exchange-coupling with the antiferromagnetic layer, a free layer whose direction of magnetization changes in response to external magnetization, and a nonmagnetic layer disposed between the ferromagnetic layer and the free layer;
- a domain control layer for regulating a magnetic domain of the free layer by applying a longitudinal bias magnetic field thereto;
- and first and second shield layers, disposed so as to oppose each other by way of the magnetoresistive device, for shielding the magnetoresistive device;
- the method comprising:
- a step of forming the first shield layer;
- a step of forming the magnetoresistive device, carried out after the step of forming the first shield layer;
- a heat treatment step of providing exchange coupling between the ferromagnetic layer and the antiferromagnetic layer so as to magnetize the ferromagnetic layer in a predetermined direction;
- a step of forming the domain control layer so as to hold the magnetoresistive device in a track width direction;
- a step of magnetizing the domain control layer in a direction yielding a magnetic field in the same direction as with a magnetic field received by the ferromagnetic layer upon exchange-coupling with the antiferromagnetic layer;
- a step of forming the second shield layer, carried out after the step of magnetizing the domain control layer;
- and
- a step of remagnetizing the domain control layer in a direction yielding the longitudinal bias magnetic field, carried out after the step of forming the second shield layer.
Dependencies are inferred from the claim text.