Method for producing a layer with a predefined layer thickness profile
OwnerRobert Aigner, Luder Elbrecht +3inventors
InventorsRobert Aigner, Luder Elbrecht, Stephan Marksteiner, Winfried Nessler, Hans-Jorg Timme
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Abstract
A method for producing a layer with a locally adapted or predefined layer thickness profile that can be used for to selectively set the natural frequencies of piezoelectric resonant circuits and/or the impedance of other circuit elements. A layer is applied to a substrate, then measured to determine a difference between the initial layer thickness and the predefined layer thickness profile. An ion beam is then used to etch (mill) the layer until it achieves the predefined layer thickness profile.
Claims20
A method for producing a layer with a locally adapted or predefined layer thickness profile, the method comprising:
- a) applying at least one layer to a substrate,
- b) determining a removal profile for the applied layer based on predetermined correction data, and
- c) guiding at least one ion beam over the applied layer at least once, so that, at a location of the applied layer that is struck by the ion beam, the applied layer is etched locally in accordance with the removal profile, thereby producing an etched layer having a layer thickness profile that is in accordance with the predetermined correction data.
A method for producing a first piezoelectric resonant circuit having a first natural frequency and a second piezoelectric resonant circuit having a second natural frequency, the first and second piezoelectric resonant circuits being formed on a substrate, the method comprising:
- depositing a layer on the substrate such that a first portion of the layer forms a first electrode of the first piezoelectric resonant circuit, and a second portion of the layer forms a second electrode of the second piezoelectric resonant circuit, and such that the first piezoelectric resonant circuit has a third natural frequency, and such that the second piezoelectric resonant circuit has a fourth natural frequency;
- etching, using an ion beam, a first amount of material from the first electrode until the third natural frequency of the first piezoelectric resonant circuit changes to the first natural frequency;
- and
- etching, using the ion beam, a second amount of material from the second electrode until the fourth natural frequency of the second piezoelectric resonant circuit changes the second natural frequency.
Dependencies are inferred from the claim text.