Compositions for depositing a metal layer and methods of forming a metal layer using the same

A method of depositing a metal layer on an integrated circuit device, comprising:

• loading the integrated circuit device in a deposition chamber;
• providing the deposition chamber with a transition metal precursor;
• providing the deposition chamber with a carrier gas, such that a partial pressure of the precursor and carrier gas exceeds about 0.25 Torr;
• and
• providing the deposition chamber with a hydrogen gas, such that a partial pressure of the hydrogen gas exceeds about 2.5 Torr.

A method of forming a cobalt layer on an integrated circuit device comprising:

• depositing a cobalt precursor oil an integrated circuit device in a deposition chamber;
• providing hydrogen gas into the deposition chamber;
• and
• decomposing the cobalt precursor on the integrated circuit device to form a cobalt layer.

A method of forming a cobalt layer on an integrated circuit device, comprising:

• forming an insulation layer on an integrated circuit device;
• removing a portion of the insulation layer to form a contact hole exposing the integrated circuit device;
• depositing a cobalt precursor on the integrated circuit device in a deposition chamber;
• supplying a hydrogen gas into the deposition chamber;
• and
• decomposing the cobalt precursor on the integrated circuit device to form a cobalt layer on at least one side and at least one bottom surface of the contact hole, and on the top surface of the insulation layer.

A method of forming a cobalt layer of integrated circuit device, comprising:

• forming a gate having a gate insulation layer and conductive layer pattern oil an integrated circuit device;
• forming a spacer on a side surface of the gate;
• depositing a cobalt precursor on the integrated circuit device in a deposition chamber;
• supplying hydrogen gas to the deposition chamber;
• and
• decomposing the cobalt precursor on the integrated circuit device to form a cobalt layer on the integrated circuit device, the spacer and the top surface of the gate.

A chemical vapor deposition system comprising:

• a deposition chamber having an integrated circuit device positioned therein;
• a vessel containing a transition metal precursor composition comprising a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber such that a partial pressure of the precursor and carrier gas provided into the deposition chamber exceeds about 0.25 Torr;
• and
• hydrogen gas, such that a partial pressure of the hydrogen gas provided into the deposition chamber exceeds about 2.5 Torr.

A method of forming a cobalt layer on a integrated circuit device comprising:

• vaporizing a cobalt precursor;
• combining the vaporized cobalt precursor and a carrier gas in a deposition chamber;
• depositing the cobalt precursor on the integrated circuit device;
• and
• decomposing the cobalt precursor on the integrated circuit device by providing hydrogen gas into the deposition chamber.