Back to results
US 2004/0203221 A1Published application
Electronic device manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorsTetsuo Matsuda, Hiroshi Toyoda, Hisashi Kaneko
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorsTetsuo Matsuda, Hiroshi Toyoda, Hisashi Kaneko
Estimating the term…
An electronic device manufacturing method comprises forming an insulating film above a substrate, forming a to-be-filled region which includes at least one of an interconnection groove and a hole in the insulating film, forming a first conductive film containing a catalyst metal which accelerates electroless plating, so as to line an internal surface of the to-be-filled region, forming a second conductive film on the first conductive film by the electroless plating, so as to line the internal surface of the to-be-filled region via the first conductive film, and forming a third conductive film on the second conductive film by electroplating, so as to fill the to-be-filled region via the first conductive film and the second conductive film.
-14. (Canceled)
An electronic device manufacturing method comprising:
An electronic device manufacturing method comprising:
Dependencies are inferred from the claim text.