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US 2004/0203183 A1Published application
Phase change memory element capable of low power operation and method of fabricating the same
AssigneeElectronics and Telecommunications Research Institute
InventorsSeong Mok Cho, Sangouk Ryu, In Kyu You, Sung Min Yoon, Kwi Dong Kim, Nam Yeal Lee, Byoung Gon Yu
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Abstract
Provided is a phase-change element capable of operating with low power consumptions and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is disposed opposite to the first electrode, and a memory layer made of a phase-change material located contacts the side surfaces of the first electrode and the second electrode.
Claims18
A phase-change memory element, comprising:
- a first electrode used as a heating layer;
- a second electrode whose side surface faces a side surface of the first electrode in side direction;
- and
- a memory layer located between the side surfaces of the first electrode and the second electrode and is made of a phase-change material contacting at least the side surface of the first electrode.
1 more element
A method of manufacturing a phase-change element, comprising:
- forming an electrode layer pattern on a first insulating layer;
- forming a second insulating layer covering the electrode layer pattern;
- forming a contact hole, through the second insulating layer and the electrode layer pattern that dividing the electrode layer pattern into a first electrode, which is used as a heating layer, and a second electrode layer, which sidely is opposite to the first electrode;
- and
- forming a memory layer with a phase-change material contacting the side surfaces of the first electrode and the second electrode, which are exposed by the contact hole, in the contact hole.
2 more elements
Dependencies are inferred from the claim text.