Read and erase verify methods and circuits suitable for low voltage non-volatile memories

A method of operating a non-volatile memory, comprising:

• selecting a data storage element storing one of a plurality of data states, said plurality of data states comprising a first data state characterized by a negative threshold voltage and one or more second data states characterized by a positive threshold voltage;
• providing a sensing parameter, wherein said sensing parameter is compensated for operating conditions;
• and
• using said sensing parameter to distinguish between the first data states and the second data states.

A non-volatile memory device, comprising:

• means for storing a data value selected from a plurality of data states, a first of which is characterized by a negative threshold value and a second of which is characterized by a positive threshold value;
• means for compensating a parameter for the operating conditions of the memory device;
• and
• means for distinguishing between said first data state and said second data state by use of said compensated parameter.