Magnetic non-volatile memory coil layout architecture and process integration scheme

A method of selecting a magnetic memory cell from a plurality of magnetic memory cells in a magnetoresistive random access memory (MRAM), comprising:

• passing current through a bit line corresponding to the magnetic memory cell;
• allowing current to pass through a word row line that is electrically coupled to a word line of the magnetic memory cell;
• and
• allowing current to pass through a word column line that is electrically coupled to a column line of the magnetic memory cell such that a word current passes through the word line of the magnetic memory cell.

A magnetoresistive random access memory (MRAM) device comprising:

• a plurality of magnetic memory cell bodies in an array, where a magnetic memory cell body has a first resistance when a first variable magnetic orientation thereof is aligned with a second fixed magnetic orientation, and has a second resistance when the first variable magnetic orientation is anti-aligned with the second fixed magnetic orientation;
• a plurality of first conductors that group related magnetic memory cell bodies together so that a first group of magnetic memory cell bodies corresponds to a first of the first conductors and a second group of magnetic memory cell bodies corresponds to a second of the second conductors;
• and
• a plurality of second conductors, where second conductors wrap around multiple memory cell bodies such that a first of the second conductors individually wraps around only one memory cell body from the first group and then individually wraps around only one memory cell body from the second group.

A method of selecting a magnetic memory cell from a plurality of magnetic memory cells in a magnetoresistive random access memory (MRAM), comprising:

• passing current through a first line corresponding to the magnetic memory cell;
• allowing current to pass through a row line that is electrically coupled to a second line of the magnetic memory cell;
• and
• allowing current to pass through a column line that is electrically coupled to a third line of the magnetic memory cell such that a current passes through the second line of the magnetic memory cell.