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US 2004/0201876 A1Published application
Optical transistor
AssigneeReveo, Inc.
InventorSadeg M. Faris
Life of this patent
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Abstract
An optical transistor is disclosed. The optical transistor consists of a high speed photodetector region incident to a light intensity modulating region which separates a drain and source region. The disclosed optical transistor is able to exhibit high speed performance with good signal isolation and high amplification gain.
Claims17
An optical transistor fabricated on a substrate comprising:
- a light intensity modulator region;
- and
- a photo conductor region incident to said light intensity modulator region for controlling said light intensity modulator region.
Dependencies are inferred from the claim text.