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US 2004/0201788 A1Published application
Semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorYasuhiro Matsushima
Life of this patent
Estimating the term…
Abstract
A liquid crystal display device has a plurality of gate bus wirings and source bus wirings on one of paired substrates. Moreover, a inter-layer insulating film made of an organic material is provided on thin film transistors of respective picture elements, and a picture element electrode is provided on the inter-layer insulating film. Furthermore, the liquid crystal display device is provided with an additional capacity common wiring which is provided on the inter-layer insulating film and forms an additional capacity section between the picture element electrode and the additional capacity common wiring. As a result, the liquid crystal display device can realize high quality and a high aperture ratio.
Claims18
A semiconductor device comprising:
- a non-monocrystal silicon thin film, a gate insulating film, and a gate bus wiring provided on one of paired substrates in this order;
- a first inter-layer insulating film made of an organic material laminated above said gate bus wiring;
- and
- a source bus wiring, a second inter-layer insulating film, and a picture element electrode provided above said first inter-layer insulating film in this order.
1 more element
A semiconductor device, comprising:
- a thin film transistor including a semiconductor layer, a gate insulating layer, and a gate electrode;
- a first inter-layer insulating film provided above the thin film transistor;
- a source electrode and a piling electrode provided above the first inter-layer insulating film;
- a second inter-layer insulating film provided above the piling electrode;
- a picture element electrode provided above the second inter-layer insulating film;
- and
- an additional capacity for holding electrode charges of the picture element electrode provided between the first and second inter-layer insulating films;
- wherein the piling electrode electrically connects the semiconductor layer of the thin film transistor and the picture element electrode and the piling electrode extends in a direction of a thickness of said first inter-layer film, and
- wherein the additional capacity includes a first electrode, a second electrode, and an inorganic insulating film provided between the first and second electrodes, the first electrode is the piling electrode, and the inorganic insulating film has a greater dielectric constant than at least one of the first and second inter-layer insulating films.
6 more elements
A semiconductor device comprising:
- a plurality of scanning lines;
- a plurality of signal lines arranged to cross said scanning lines;
- a first insulating layer provided between said scanning lines and said signal lines;
- a switching element provided at an intersection of one of said scanning lines and one of said signal lines;
- a second insulating layer formed above said scanning lines, said signal lines, and said switching element;
- a picture element electrode formed above said second insulating layer;
- and
- a light shielding layer formed on said second insulating layer whose thickness is larger than that of said first insulating layer.
5 more elements
A semiconductor device comprising:
- a plurality of scanning lines;
- a plurality of signal lines arranged to cross said scanning lines;
- an insulating layer provided between said scanning lines and said signal lines;
- a switching element provided at an intersection of one of said scanning lines and one of said signal lines;
- a flattened layer formed above said insulating layer, said scanning lines, said signal lines and said switching element;
- a picture element electrode formed above said flattened layer;
- and
- a light shielding layer formed on said flattened layer.
5 more elements
A semiconductor device comprising:
- a plurality of scanning lines;
- a plurality of signal lines arranged to cross said scanning lines;
- a first insulating layer provided between said scanning lines and said signal lines;
- a switching element provided at an intersection of one of said scanning lines and one of said signal lines, the switching element including a gate, a source and a drain electrode;
- a second insulating layer formed above said scanning lines, said signal lines and said switching element;
- a picture element electrode formed above said second insulating layer;
- and
- an additional capacity electrode formed on said first insulating layer, said additional capacity electrode and said drain electrode respectively forming parts of an additional capacity section, said additional capacity electrode overlapping with one of said signal lines.
5 more elements
A semiconductor device comprising:
- a plurality of scanning lines;
- a plurality of signal lines extending so as to cross the scanning lines;
- a first insulating layer that electrically insulates the scanning lines and the signal lines;
- and
- a plurality of pixels, each pixel comprising:
- a switch arranged in the vicinity of a crossing of one of the scanning lines and one of the signal lines, the switch comprising a gate electrode and first and second electrodes,
- a pixel electrode electrically connected to the first electrode of the switch, and
- an additional capacity section comprising the first electrode and an additional capacity electrode insulatively spaced from the first electrode, wherein the additional capacity electrode overlaps one of the signal lines.
5 more elements
Dependencies are inferred from the claim text.