Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts
AssigneeEmcore Corporation
InventorsHari S. Venugopalan, Ivan Eliashevich
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Abstract
A flip chip light emitting diode die (12) includes a light-transmissive substrate (20) and a plurality of semiconductor layers (22) are disposed on the light-transmissive substrate (20). The semiconductor layers (22) define a light-generating p/n junction. An electrode (30) is formed on the semiconductor layers (22) for flip-chip bonding the diode die (12) to an associated mount (14). The electrode (30) includes an optically transparent layer (42) formed of a substantially optically transparent material adjacent to the semiconductor layers (22) that makes ohmic contact therewith, and a reflective layer (44) adjacent to the optically transparent layer (42) and in electrically conductive communication therewith.
Claims26
A flip chip light emitting diode including:
- a light-transmissive substrate;
- a plurality of semiconductor layers disposed on the light-transmissive substrate, the semiconductor layers defining a light-generating p/n junction;
- and
- a reflective electrode formed on the semiconductor layers for flip-chip bonding the diode die to an associated mount, the electrode including an optically transparent layer formed of a substantially optically transparent material adjacent to the semiconductor layers and making ohmic contact therewith, and a reflective layer adjacent to the optically transparent layer and in electrically conductive communication therewith.
A method for producing a light output, the method including:
- generating light in active layers of a light emitting diode;
- transmitting a direct portion of the generated light through a light-transmissive substrate of the light emitting diode to contribute to the light output;
- transmitting an indirect portion of the generated light through an optically transparent layer of a p-type electrode of the light emitting diode, the optically transparent layer being formed of a light-transmissive material;
- reflecting the transmitted indirect portion of the generated light off a reflective layer of the p-type electrode of the light emitting diode;
- and
- transmitting the transmitted and reflected indirect portion of the generated light through the light-transmissive substrate of the light emitting diode to contribute to the light output.
A flip chip light emitting diode including:
- a light-transmissive substrate;
- a plurality of semiconductor layers disposed on the light-transmissive substrate, the semiconductor layers defining a light-generating p/n junction;
- and
- a reflective electrode formed on the semiconductor layers for flip-chip bonding the diode die to an associated mount, the electrode including a degenerately doped wide bandgap semiconductor layer having a bandgap larger than photon energies of light produced by the plurality of semiconductor layers, the degenerately doped wide bandgap semiconductor layer being adjacent to the semiconductor layers and making ohmic contact therewith, and a reflective layer adjacent to the degenerately doped wide bandgap semiconductor layer and in electrically conductive communication therewith.
A flip chip light emitting diode die including:
- a light-transmissive substrate;
- a plurality of semiconductor layers disposed on the light-transmissive substrate, the semiconductor layers defining a light-generating p/n junction;
- and
- a reflective electrode formed on a p-type group III-nitride semiconductor layer of the semiconductor layers for flip-chip bonding the diode die to an associated mount, the electrode including an indium tin oxide layer adjacent to the p-type group III-nitride semiconductor layer and making ohmic contact therewith, and a reflective layer adjacent to the indium tin oxide layer and in electrically conductive communication therewith.
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Dependencies are inferred from the claim text.