US 2004/0201108 A1 · Semiconductor device and method for manufacturing the same

Abstract

The present invention provides a semiconductor device having a multilayer wiring structure including a lower Cu buried-wiring layer, a SiC film, a SiOC film of 400 nm in thickness functioning as an interlayer insulating film, and an upper Cu buried-wiring layer electrically connected to the lower buried-wiring layer through contact plugs passing through the interlayer insulating film. The contact plugs and the upper Cu buried wiring layer are formed a single burying step of the dual damascene process. The SiOC film has a carbon content of about 12 atomic % and a relative dielectric constant of about 3.0. The upper Cu buried wiring layer is formed by burying a Cu film, through a barrier metal, in wiring grooves which are provided in the inter-wiring insulating film including a laminated film of an organic film, e.g., a PAE film of 200 nm in thickness, and a SiOC film of 150 nm in thickness.

Claims14

Dependent claims

A semiconductor device having a wiring structure formed by a dual damascene method, the wiring structure comprising:

a lower buried-wiring layer;
an interlayer insulating film provided on the lower buried-wiring layer;
an inter-wiring insulating film provided on the interlayer insulating film;
and
an upper buried-wiring layer buried in wiring grooves provided in the inter-wiring insulating film, the upper buried-wiring layer being electrically connected to the lower buried-wiring layer through contact plugs passing through the interlayer insulating film;
wherein the interlayer insulating film is a first carbon-containing silicon oxide film (SiOC film), and
the inter-wiring insulating film comprises a laminated insulating film including an organic or inorganic low dielectric constant insulating film, and a second carbon-containing silicon oxide film (SiOC film) provided on the low dielectric constant insulating film, the second carbon-containing silicon oxide film having a lower carbon content than that of the first carbon-containing silicon oxide film.

4 more elements

A method for manufacturing a semiconductor device having a wiring structure comprising a lower buried-wiring layer, an interlayer insulating film provided on the lower buried-wiring layer, an inter-wiring insulating film provided on the interlayer insulating film, and an upper buried-wiring layer buried in wiring grooves provided in the inter-wiring insulating film, the upper buried-wiring layer being electrically connected to the lower buried-wiring layer through contact plugs passing through the interlayer insulating film;

wherein a method for forming the wiring structure comprises the steps of:
(1) depositing a first insulating film as the interlayer insulating film on the lower wiring;
(2) successively depositing a second insulating film and a first mask forming layer functioning as a third insulating film and for forming a first mask to form a laminated film functioning as the inter-wiring insulating film of the upper wiring, and depositing second and third mask forming layers for forming second mask and third mask, respectively;
(3) patterning the third mask forming layer to form the third mask having a wiring groove pattern;
(4) forming a resist mask having a connecting hole pattern on the second mask forming layer including the third mask;
(5) etching the third mask, the second mask forming layer, and the first mask forming layer functioning as the third insulating film through the resist mask, and further etching the second insulating film to form connecting holes;
(6) etching the second mask forming layer through the third mask to form the second mask having a wiring groove pattern, and digging down the connecting holes to an intermediate portion of the first insulating film;
(7) etching the first mask forming layer functioning as the third insulating film through the second mask to form a first mask having a wiring groove pattern, and further etching the first insulating film remaining at the bottoms of the connecting holes to form connecting holes;
(8) etching the second insulating film through the first mask to form wiring grooves in the second insulating film;
and
(9) removing the second and third masks;
and
the first mask forming layer functioning as the third insulating film comprises a carbon-containing silicon oxide film (SiOC film).

10 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for manufacturing the same

Life of this patent

Semiconductor device and method for manufacturing the same

Life of this patent

Abstract

Claims14